
(1) The following sentence in the abstract: "The measured
results indicate that the insertion loss of the  single
transition  is  smaller than 11dB, and the return loss is
better than 11dB over the frequency from 75GHz to 105GHz."
does not make sense, probably it contains typing errors?
Further this does not correspont to what you say at the
end of the article.

(2) Please explain the following sentence: "However, some
passive elements  using  waveguide technology  with
low-loss, high-Q still are required to obtain satisfied
performances." In a boradband waveguide-to-microstrip
transition we usually do not want high-Q by definition?

(3) Color drawings like Figure 1, Figure 3 can not be
reproduced in a black-and-white magazine.

(4) Equations (1) and (2) are corrupted in the source file.

(5) What is "Z0=50 W"?

(6) The dimension W3=0.39mm corresponds to about 0.2 lambda
in the given substrate. This is not small compared to the
wavelength, therefore a TEM approximation does not make sense.

(7) On Figure 6, the scale for S21 goes from -40dB to -200dB.
This does not make sense.

(8) On Figure 6, the scale for S11 goes from -20dB to -60dB.
This does not make sense.

(9) Please explain the radiation loss you mention in your
closed cavity structure.

(10) Overall the text contains many typing mistakes,
inappropriate expressions and grammar errors. These MUST
be corrected for publication.
